Xu, ZhenZhenXuKaczer, BenBenKaczerDegraeve, RobinRobinDegraeveDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeynsGroeseneken, GuidoGuidoGroeseneken2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/8419Electrical properties of Al2O3/ZrO2/Al2O3 gate stack in p-substrate metal oxide semiconductor devicesJournal article