Xie, QiQiXieDeduytsche, DavyDavyDeduytscheSchaekers, MarcMarcSchaekersCaymax, MattyMattyCaymaxDelabie, AnneliesAnneliesDelabieQu, Xin-PingXin-PingQuDetavernier, ChristopheChristopheDetavernier2021-10-192021-10-1920100003-6951https://imec-publications.be/handle/20.500.12860/18377Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayerJournal article