Characterization and modeling of diodes in sub-45 nm CMOS technologies under HBM stress conditions

Linten, DimitriDimitriLintenThijs, StevenStevenThijsScholz, MirkoMirkoScholzTremouilles, DavidDavidTremouillesSawada,SawadaNakaei,NakaeiHasebe,HasebeGroeseneken, GuidoGuidoGroeseneken2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12497Characterization and modeling of diodes in sub-45 nm CMOS technologies under HBM stress conditionsProceedings paper