Highly doped-SiGe as a potential contact material in NEMS ohmic switches: a novel method for contact resistance prediction

Ramezani, MalihehMalihehRamezaniTamaddon, Amir-HosseinAmir-HosseinTamaddonSeveri, SimoneSimoneSeveriVanstreels, KrisKrisVanstreelsDe Meyer, KristinKristinDe MeyerWitvrouw, AnnAnnWitvrouw2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22981Highly doped-SiGe as a potential contact material in NEMS ohmic switches: a novel method for contact resistance predictionMeeting abstract