Enhancement-mode p-GaN-HEMT Epitaxy Technology on 200 mm Si Substrates

Liang, HuHuLiangPosthuma, NielsNielsPosthumaStoffels, SteveSteveStoffelsZhao, MingMingZhaoDecoutere, StefaanStefaanDecoutere2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33442Enhancement-mode p-GaN-HEMT Epitaxy Technology on 200 mm Si SubstratesOral presentation