In situ-grown ultra-thin Si3N4 passivation and gate dielectric layers for AlGaN/GaN insulating gate HFET

Wang, WenfeiWenfeiWangDerluyn, JoffJoffDerluynLeys, MaartenMaartenLeysGermain, MarianneMarianneGermainSchreurs, DominiqueDominiqueSchreursBorghs, GustaafGustaafBorghs2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11541In situ-grown ultra-thin Si3N4 passivation and gate dielectric layers for AlGaN/GaN insulating gate HFETOral presentation