Study of the etching mechanism of heavily doped Si in HF

Valckx, NickNickValckxCuypers, DanielDanielCuypersVos, RitaRitaVosPhilipsen, HaroldHaroldPhilipsenRip, JensJensRipDoumen, GeertGeertDoumenMertens, PaulPaulMertensHeyns, MarcMarcHeynsDe Gendt, StefanStefanDe Gendt2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/18133Study of the etching mechanism of heavily doped Si in HFMeeting abstract