Investigation of crystal defects in As-grown and processed silicon wafers and heteroepitaxial layers by infrared light scattering

Kissinger, G.G.KissingerVanhellemont, JanJanVanhellemontGräf, D.D.GräfZulehner, W.W.ZulehnerClaeys, CorCorClaeysRichter, H.H.Richter2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/702Investigation of crystal defects in As-grown and processed silicon wafers and heteroepitaxial layers by infrared light scatteringProceedings paper