Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates

You, ShuzhenShuzhenYouPosthuma, NielsNielsPosthumaRonchi, NicoloNicoloRonchiStoffels, SteveSteveStoffelsBakeroot, BenoitBenoitBakerootWellekens, DirkDirkWellekensLiang, HuHuLiangZhao, MingMingZhaoDecoutere, StefaanStefaanDecoutere2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/32340Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substratesProceedings paperhttp://www.imt.ro/WOCSDICE2018/Program%20WOCSDICE2018_07.05.2018.pdf