Ge content and recess depth dependence of the band-to-band tunneling current in Si 1-xGe x/Si hetero-junctions

Rodriguez, A.L.A.L.RodriguezTejada, J.A.J.J.A.J.TejadaBargallo Gonzalez, MireiaMireiaBargallo GonzalezEneman, GeertGeertEnemanClaeys, CorCorClaeysSimoen, EddyEddySimoen2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/19695Ge content and recess depth dependence of the band-to-band tunneling current in Si 1-xGe x/Si hetero-junctionsProceedings paper