Measurement of hole transport in ultrathin SiGe layers and their application in 2D device simulations of heterojunction pMOSFETs

Lander, RobRobLanderPonomarev, YouriYouriPonomarevde Boer, W. B.W. B.de BoerLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4514Measurement of hole transport in ultrathin SiGe layers and their application in 2D device simulations of heterojunction pMOSFETsProceedings paper