FETs on 2-D materials: deconvolution of the channel and contact characteristics by four-terminal resistance measurements on WSe2 transistors

Sutar, SurajitSurajitSutarAsselberghs, IngeIngeAsselberghsLin, DennisDennisLinThean, AaronAaronTheanRadu, IulianaIulianaRadu2021-10-242021-10-2420170018-9383https://imec-publications.be/handle/20.500.12860/29530FETs on 2-D materials: deconvolution of the channel and contact characteristics by four-terminal resistance measurements on WSe2 transistorsJournal articlehttp://ieeexplore.ieee.org/document/7924339/