Analysis of analog parameters on in NW-TFETs with Si and SiGe source composition for at high temperatures

Bordallo, CaioCaioBordalloMartino, Joao A.Joao A.MartinoAgopian, PaulaPaulaAgopianRooyackers, RitaRitaRooyackersVandooren, AnneAnneVandoorenThean, AaronAaronTheanSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25004Analysis of analog parameters on in NW-TFETs with Si and SiGe source composition for at high temperaturesProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7298148