Growth mechanisms for Si epitaxy on O atomic layers: impact of O-content and surface structure

Jayachandran, SuseendranSuseendranJayachandranBillen, ArneArneBillenDouhard, BastienBastienDouhardConard, ThierryThierryConardMeersschaut, JohanJohanMeersschautMoussa, AlainAlainMoussaCaymax, MattyMattyCaymaxBender, HugoHugoBenderVandervorst, WilfriedWilfriedVandervorstHeyns, MarcMarcHeynsDelabie, AnneliesAnneliesDelabie2021-10-232021-10-2320160169-4332https://imec-publications.be/handle/20.500.12860/26782Growth mechanisms for Si epitaxy on O atomic layers: impact of O-content and surface structureJournal articlehttp://www.sciencedirect.com/science/article/pii/S0169433216309205