Zhang, E. ZE. ZZhangFleetwood, D. M.D. M.FleetwoodHatchel, J. A.J. A.HatchelLiang, C.C.LiangReed, R.R.ReedAlles, M. L.M. L.AllesSchrimpf, R. D.R. D.SchrimpfLinten, DimitriDimitriLintenMitard, JeromeJeromeMitardChisholm, M. F.M. F.ChisholmPantelides, S. T.S. T.Pantelides2021-10-242021-10-2420170018-9499https://imec-publications.be/handle/20.500.12860/30013Total ionizing dose effects on strained Ge pMOS FinFETS on bulk SiJournal articlehttp://ieeexplore.ieee.org/document/7765121/