Eneman, GeertGeertEnemanBrunco, DavidDavidBruncoWitters, LiesbethLiesbethWittersVincent, BenjaminBenjaminVincentFavia, PaolaPaolaFaviaHikavyy, AndriyAndriyHikavyyDe Keersgieter, AnAnDe KeersgieterMitard, JeromeJeromeMitardLoo, RogerRogerLooVeloso, AnabelaAnabelaVelosoRichard, OlivierOlivierRichardBender, HugoHugoBenderLee, Seung HunSeung HunLeeVan Dal, MarkMarkVan DalKabir, NafeesNafeesKabirVandervorst, WilfriedWilfriedVandervorstCaymax, MattyMattyCaymaxHoriguchi, NaotoNaotoHoriguchiCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20651Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyondProceedings paper