GaN-on-Si HEMTs Above 10 W/mm at 2 GHz together with high thermal stability at 325°C

Medjdoub, FaridFaridMedjdoubMarcon, DenisDenisMarconDas, JoJoDasDerluyn, JoffJoffDerluynCheng, KaiKaiChengDegroote, StefanStefanDegrooteVellas, NicolasNicolasVellasGaquière, ChristopheChristopheGaquièreGermain, MarianneMarianneGermainDecoutere, StefaanStefaanDecoutere2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17610GaN-on-Si HEMTs Above 10 W/mm at 2 GHz together with high thermal stability at 325°CProceedings paper