RTS Noise Characterization of Trap Properties in InGaAs nFinFETs

Xiao, XiaoleiXiaoleiXiaoHe, LiangLiangHeChen, HuaHuaChenWang, XianyuXianyuWangSimoen, EddyEddySimoenClaeys, CorCorClaeys2024-01-112023-07-162024-01-1120230018-9383WOS:001006673500001https://imec-publications.be/handle/20.500.12860/42169RTS Noise Characterization of Trap Properties in InGaAs nFinFETsJournal article10.1109/TED.2023.3278612WOS:001006673500001RANDOM TELEGRAPH SIGNALSRECOMBINATIONGENERATIONDEFECTSIDENTIFICATIONLIFETIMESCAPTUREVOLTAGEMOSFET