Parasitic source/drain resistance reduction in N-channel SOI MuGFETs with 15nm wide fins

Dixit, AbhisekAbhisekDixitFerain, IsabelleIsabelleFerainDe Meyer, KristinKristinDe MeyerKottantharayil, AnilAnilKottantharayilCollaert, NadineNadineCollaertRooyackers, RitaRitaRooyackersLeys, FrederikFrederikLeysDe Keersgieter, AnAnDe KeersgieterHoffmann, ThomasThomasHoffmannLoo, RogerRogerLooCaymax, MattyMattyCaymaxJurczak, GosiaGosiaJurczakBiesemans, SergeSergeBiesemansGoodwin, MichaelMichaelGoodwinZimmerman, PaulPaulZimmerman2021-10-162021-10-162005-10https://imec-publications.be/handle/20.500.12860/10393Parasitic source/drain resistance reduction in N-channel SOI MuGFETs with 15nm wide finsProceedings paper