Heteroepitaxy of III-V compound semiconductors on Si for logic applications: Selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers

Cantoro, MircoMircoCantoroMerckling, ClementClementMercklingJiang, SijiaSijiaJiangGuo, WeimingWeimingGuoWaldron, NiamhNiamhWaldronBender, HugoHugoBenderDekoster, JohanJohanDekosterLoo, RogerRogerLooVandervorst, WilfriedWilfriedVandervorstCaymax, MattyMattyCaymaxHeyns, MarcMarcHeyns2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20414Heteroepitaxy of III-V compound semiconductors on Si for logic applications: Selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffersMeeting abstract