Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure

Nagahara, SeijiSeijiNagaharaCarcasi, MichaelMichaelCarcasiShiraishi, GosukeGosukeShiraishiNakagawa, HisashiHisashiNakagawaDei, SatoshiSatoshiDeiShiozawa, TakahiroTakahiroShiozawaNafus, KathleenKathleenNafusDe Simone, DaniloDaniloDe SimoneVandenberghe, GeertGeertVandenbergheStock, Hans-JürgenHans-JürgenStockKüchler, BerndBerndKüchlerHori, MasafumiMasafumiHoriNaruoka, TakehikoTakehikoNaruokaNagai, TomokiTomokiNagaiMinekawa, YukieYukieMinekawaIseki, TomohiriTomohiriIsekiKondo, YoshihiroYoshihiroKondoYoshihara, KosukeKosukeYoshiharaKamei, YuyaYuyaKameiTomono, MasaruMasaruTomonoShimada, RyoRyoShimadaBiesemans, SergeSergeBiesemansNakashima, HideoHideoNakashimaFoubert, PhilippePhilippeFoubertBuitrago, ElizabethElizabethBuitragoVockenhuber, MichaelaMichaelaVockenhuberEkinci, YasinYasinEkinciOshima, AkihiroAkihiroOshimaTagawa, SeiichiSeiichiTagawa2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29057Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposureProceedings paper10.1117/12.2258217