D.C. and low frequency noise characteristics of g-irradiated gate-all-around silicon-on-insulator MOS transistors

Simoen, EddyEddySimoenClaeys, CorCorClaeysCoenen, S.S.CoenenDecreton, M.M.Decreton2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/881D.C. and low frequency noise characteristics of g-irradiated gate-all-around silicon-on-insulator MOS transistorsJournal article