AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance

Visalli, DomenicaDomenicaVisalliDerluyn, JoffJoffDerluynDegroote, StefanStefanDegrooteLeys, MaartenMaartenLeysCheng, KaiKaiChengGermain, MarianneMarianneGermainVan Hove, MarleenMarleenVan HoveBorghs, GustaafGustaafBorghs2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14761AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistanceProceedings paper