Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

Nag, ManojManojNagBhoolokam, AjayAjayBhoolokamSteudel, SoerenSoerenSteudelMyny, KrisKrisMynyMaas, JorisJorisMaasVaisman Chasin, AdrianAdrianVaisman ChasinGroeseneken, GuidoGuidoGroesenekenHeremans, PaulPaulHeremans2021-10-222021-10-2220140021-4922https://imec-publications.be/handle/20.500.12860/24298Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivationJournal article