Wet selective SiGe etch to enable Ge nanowire formation.

Sebaai, FaridFaridSebaaiWitters, LiesbethLiesbethWittersHolsteyns, FrankFrankHolsteynsWostyn, KurtKurtWostynRip, JensJensRipYukifumi, YoshidaYoshidaYukifumiLieten, RubenRubenLietenBilodeau, StevenStevenBilodeauCooper, EmanuelEmanuelCooper2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27288Wet selective SiGe etch to enable Ge nanowire formation.Proceedings paperhttp://www.scientific.net/SSP.255.3