First demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers

Vandooren, AnneAnneVandoorenFranco, JacopoJacopoFrancoWu, ZhichengZhichengWuParvais, BertrandBertrandParvaisLi, WaikinWaikinLiWalke, AmeyAmeyWalkePeng, LanLanPengDeshpande, ParuParuDeshpandeRassoul, NouredineNouredineRassoulHellings, GeertGeertHellingsJamieson, GeraldineGeraldineJamiesonInoue, FumihiroFumihiroInoueDevriendt, KatiaKatiaDevriendtTeugels, LieveLieveTeugelsHeylen, NancyNancyHeylenVecchio, EmmaEmmaVecchioZheng, T.T.ZhengRosseel, ErikErikRosseelVanherle, WendyWendyVanherleHikavyy, AndriyAndriyHikavyyMannaert, GeertGeertMannaertChan, BTBTChanRitzenthaler, RomainRomainRitzenthalerMitard, JeromeJeromeMitardRagnarsson, Lars-AkeLars-AkeRagnarssonWaldron, NiamhNiamhWaldronDe Heyn, VincentVincentDe HeynDemuynck, StevenStevenDemuynckBoemmels, JuergenJuergenBoemmelsMocuta, DanDanMocutaRyckaert, JulienJulienRyckaertCollaert, NadineNadineCollaert2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/32139First demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafersProceedings paperhttps://ieeexplore.ieee.org/document/8614654