Strain study in transistors with SiC and SiGe source and drain by STEM nano beam diffraction

Favia, PaolaPaolaFaviaKlenov, DmitriDmitriKlenovEneman, GeertGeertEnemanVerheyen, PeterPeterVerheyenBauer,BauerWeeks,WeeksThomas,ThomasBender, HugoHugoBender2021-10-172021-10-172008-09https://imec-publications.be/handle/20.500.12860/13716Strain study in transistors with SiC and SiGe source and drain by STEM nano beam diffractionProceedings paper