Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition

Tsai, WilmanWilmanTsaiChen, JianJianChenCarter, RichardRichardCarterCartier, EduardEduardCartierKluth, JonJonKluthRichard, OlivierOlivierRichardClaes, MartineMartineClaesLin, StevenStevenLinNohira, HiroshiHiroshiNohiraConard, ThierryThierryConardCaymax, MattyMattyCaymaxYoung, EdwardEdwardYoungVandervorst, WilfriedWilfriedVandervorstDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeynsManabe, YukikoYukikoManabeMaes, JanJanMaesRittersma, ChrisChrisRittersmaBesling, WimWimBeslingRoozeboom, F.F.Roozeboom2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6894Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor DepositionProceedings paper