Fabrication, characterization and analysis of Ge/GeSn heterojunction p-type tunnel transistors

Schulte-Braucks, ChristianChristianSchulte-BraucksPandey, RahulRahulPandeySajjad, Redwan NoorRedwan NoorSajjadBarth, MikeMikeBarthGhosh, Ram KrishnaRam KrishnaGhoshGrisafe, BenBenGrisafeSharma, PankajPankajSharmavon den Driesch, NilsNilsvon den DrieschVohra, AnuragAnuragVohraRayner, Gilbert BruceGilbert BruceRaynerLoo, RogerRogerLooMantl, SiegfriedSiegfriedMantlBuca, DanDanBucaYeh, C-C.C-C.YehWu, Cheng-HsienCheng-HsienWuTsai, WilmanWilmanTsaiAntoniadis, DimitriDimitriAntoniadisDatta, SumanSumanDatta2021-10-242021-10-242017-090018-9383https://imec-publications.be/handle/20.500.12860/29398Fabrication, characterization and analysis of Ge/GeSn heterojunction p-type tunnel transistorsJournal articlehttp://ieeexplore.ieee.org/document/8024179/