Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors

Huber, MartinMartinHuberSilvestri, MarcoMarcoSilvestriKnuuttila, LauriLauriKnuuttilaPozzovivo, GianmauroGianmauroPozzovivoAndreev, AndreiAndreiAndreevKadashchuk, AndriyAndriyKadashchukBonanni, AlbertaAlbertaBonanniLundskog, AndersAndersLundskog2021-10-222021-10-222015-050003-6951https://imec-publications.be/handle/20.500.12860/25402Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistorsJournal article10.1063/1.4927405http://scitation.aip.org/content/aip/journal/apl/107/3/10.1063/1.4927405