Kuo, Ying-ChunYing-ChunKuoYu, HaoHaoYuBraga, Nelson De AlmeidaNelson De AlmeidaBragaFang, JingtianJingtianFangGupta, AmratanshAmratanshGuptaYadav, SachinSachinYadavSibaja-Hernandez, ArturoArturoSibaja-HernandezAlian, AliRezaAliRezaAlianPeralagu, UthayasankaranUthayasankaranPeralaguCollaert, NadineNadineCollaertParvais, BertrandBertrandParvais2026-09-142026-09-1420260741-31061558-0563https://imec-publications.be/handle/20.500.12860/60365We explore the physical mechanisms responsible for hole generation in GaN HEMTs in the semi-on state by experimentally investigating dependence of gate-collected hole current on VDS , VGS and temperature. Three key observations contradict conventional impact ionization: the hole current 1) saturates at high electric fields; 2) exhibits a positive temperature dependence; and 3) has a low trigger voltage of VDS=2.7V at 5 K, which is significantly below the GaN bandgap energy. We therefore propose trap-assisted hole generation as the underlying mechanism and implement a corresponding behavioral model in TCAD. TCAD simulations accurately reproduce the observed dependencies of hole generation on VDS , VGS and temperature.engJournal article10.1109/led.2026.3711655WOS:0018629522000161558-0563