Accurate EUV lithography simulation enabled by calibrated physical resist models

Klostermann, U.K.U.K.KlostermannMulders, T.T.MuldersSchmoeller, T.T.SchmoellerDemmerle, W.W.DemmerleLorusso, GianGianLorussoHendrickx, EricEricHendrickx2021-10-182021-10-182010-090038-111Xhttps://imec-publications.be/handle/20.500.12860/17383Accurate EUV lithography simulation enabled by calibrated physical resist modelsJournal articlehttp://www.electroiq.com/index/display/semiconductors-article-display/2744719178/articles/solid-state-technology/semiconductors/