Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineering

Pawlak, MalgorzataMalgorzataPawlakPopovici, Mihaela IoanaMihaela IoanaPopoviciSwerts, JohanJohanSwertsTomida, KazuyukiKazuyukiTomidaKim, Min-SooMin-SooKimKaczer, BenBenKaczerOpsomer, KarlKarlOpsomerSchaekers, MarcMarcSchaekersFavia, PaolaPaolaFaviaBender, HugoHugoBenderVrancken, ChristaChristaVranckenGovoreanu, BogdanBogdanGovoreanuDemeurisse, CarolineCarolineDemeurisseWang, Wan-ChihWan-ChihWangAfanasiev, ValeriValeriAfanasievDebusschere, IngridIngridDebusschereAltimime, LaithLaithAltimimeKittl, JorgeJorgeKittl2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17784Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineeringProceedings paper