A new high-k/metal gate CMOS integration scheme (Diffusion and Gate Replacement) suppressing gate height asymmetry and compatible with high-thermal budget memory technologies

Ritzenthaler, RomainRomainRitzenthalerSchram, TomTomSchramSpessot, AlessioAlessioSpessotCaillat, ChristianChristianCaillatCho, Moon JuMoon JuChoSimoen, EddyEddySimoenAoulaiche, MarcMarcAoulaicheAlbert, JohanJohanAlbertChew, Soon AikSoon AikChewNoh, Kyung BongKyung BongNohSon, YunikYunikSonFazan, PierrePierreFazanHoriguchi, NaotoNaotoHoriguchiThean, AaronAaronThean2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24435A new high-k/metal gate CMOS integration scheme (Diffusion and Gate Replacement) suppressing gate height asymmetry and compatible with high-thermal budget memory technologiesProceedings paper