Radiation source dependence on floating-body effect in thin gate oxide fully-depleted SOI N-MOSFETs

Hayama, K.K.HayamaOhyama, H.H.OhyamaTakakura, K.K.TakakuraKuboyama, S.S.KuboyamaJono, T.T.JonoOka, K.K.OkaMatsuda, S.S.MatsudaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9001Radiation source dependence on floating-body effect in thin gate oxide fully-depleted SOI N-MOSFETsProceedings paper