On the thermal stability of Atomic Layer Deposition (ALD) TiN as gate electrode in MOS devices

Westlinder, J.J.WestlinderSchram, T.T.SchramPantisano, LuigiLuigiPantisanoCartier, EduardEduardCartierKerber, AndreasAndreasKerberLujan, GuilhermeGuilhermeLujanGroeseneken, GuidoGuidoGroeseneken2021-10-152021-10-152002https://imec-publications.be/handle/20.500.12860/7051On the thermal stability of Atomic Layer Deposition (ALD) TiN as gate electrode in MOS devicesOral presentation