Correlative 3D strain analysis in nanometer-sized semiconductor devices by precession electron diffraction, raman spectroscopy and FE simulations

Nanakoudis, AntonisAntonisNanakoudisNuytten, ThomasThomasNuyttenBender, HugoHugoBenderVandervorst, WilfriedWilfriedVandervorstBals, SaraSaraBalsVerbeeck, JoJoVerbeeck2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29067Correlative 3D strain analysis in nanometer-sized semiconductor devices by precession electron diffraction, raman spectroscopy and FE simulationsProceedings paper