Effects of HfSiO nitridation and TiN metal gate thickness on p- and n-SOI MuGFETs for analog anpplications

Galeti, M.M.GaletiRodrigues, M.M.RodriguesMartino, J.A.J.A.MartinoCollaert, NadineNadineCollaertSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17124Effects of HfSiO nitridation and TiN metal gate thickness on p- and n-SOI MuGFETs for analog anpplicationsProceedings paper