Study of point defects in silicon by means of positron annihilation with core electrons

Kuriplach, J.J.KuriplachVan Hoecke, T.T.Van HoeckeVan Waeyenberge, B.B.Van WaeyenbergeDauwe, C.C.DauweSegers, D.D.SegersBalcaen, N.N.BalcaenMorales, A. L.A. L.MoralesTrauwaert, Marie-AstridMarie-AstridTrauwaertVanhellemont, JanJanVanhellemontSob, M.M.Sob2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/1976Study of point defects in silicon by means of positron annihilation with core electronsProceedings paper