Polarity Inversions in AlN Films on Sapphire Exploiting Silicon and Oxygen Diffusion during High-Temperature Annealing

Bonito Oliva, ValeriaValeriaBonito OlivaRobin, EricEricRobinHagedorn, SylviaSylviaHagedornKirmse, HolmHolmKirmseRouviere, Jean-LucJean-LucRouviereOkuno, HanakoHanakoOkunoDamilano, BenjaminBenjaminDamilanoMichon, AdrienAdrienMichonRemmele, ThiloThiloRemmeleSchulz, TobiasTobiasSchulzAmari, HouariHouariAmariAlbrecht, MartinMartinAlbrechtVennegues, PhilippePhilippeVennegues2025-07-172025-07-172025-JUL 11528-7483WOS:001525995900001https://imec-publications.be/handle/20.500.12860/45910Polarity Inversions in AlN Films on Sapphire Exploiting Silicon and Oxygen Diffusion during High-Temperature AnnealingJournal article10.1021/acs.cgd.4c01641WOS:001525995900001ELECTRON-DENSITY DISTRIBUTION2ND-HARMONIC GENERATIONCRYSTAL-STRUCTUREEPITAXIAL-GROWTHALUMINUM NITRIDEEXTENDED DEFECTSGANSURFACEBUFFERFACE