High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps

Favero, D.D.FaveroCavaliere, A.A.CavaliereDe Santi, C.C.De SantiBorga, MatteoMatteoBorgaFilho Goncalez, WalterWalterFilho GoncalezGeens, KarenKarenGeensBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutereMeneghesso, G.G.MeneghessoZanoni, E.E.ZanoniMeneghini, M.M.Meneghini2024-05-232023-07-152024-05-2320231541-7026WOS:001007431500018https://imec-publications.be/handle/20.500.12860/42162High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor TrapsProceedings paper10.1109/IRPS48203.2023.10117667978-1-6654-5672-2WOS:001007431500018