Properties of p-n diodes made in polysilicon layers with intermediate grain size

Beaucarne, GuyGuyBeaucarnePoortmans, JefJefPoortmansCaymax, MattyMattyCaymaxNijs, JohanJohanNijsMertens, RobertRobertMertens2021-10-062021-10-061999https://imec-publications.be/handle/20.500.12860/3218Properties of p-n diodes made in polysilicon layers with intermediate grain sizeJournal article