Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor

Parion, JonathanJonathanParionScaffidi, RomainRomainScaffidiDuerinckx, FilipFilipDuerinckxSivaramakrishnan Radhakrishnan, HariharsudanHariharsudanSivaramakrishnan RadhakrishnanFlandre, DenisDenisFlandrePoortmans, JefJefPoortmansVermang, BartBartVermang2024-04-202024-04-202024-APR 10003-6951WOS:001195784700001https://imec-publications.be/handle/20.500.12860/43858Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitorJournal article10.1063/5.0203484WOS:001195784700001LIGHT-EMITTING-DIODESADMITTANCE SPECTROSCOPY