Tyaginov, StanislavStanislavTyaginovJech, MarkusMarkusJechRzepa, GerhardGerhardRzepaGrill, AlexanderAlexanderGrillEl-Sayed, Al-MoatasemAl-MoatasemEl-SayedPobegen, GregorGregorPobegenMakarov, AlexanderAlexanderMakarovGrasser, TiborTiborGrasser2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/31985Border trap based modeling of SiC transistor transfer characteristicsProceedings paperhttps://ieeexplore.ieee.org/document/8727083