Optimization of standard As ion implantation for NMOS Si bulk FinFETs extension

Sasaki, YuichiroYuichiroSasakiDe Keersgieter, AnAnDe KeersgieterChew, Soon AikSoon AikChewChiarella, ThomasThomasChiarellaHellings, GeertGeertHellingsTogo Mitsuhiro,Togo MitsuhiroZschaetzsch Gerd,Zschaetzsch GerdThean, AaronAaronTheanHoriguchi, NaotoNaotoHoriguchi2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/23039Optimization of standard As ion implantation for NMOS Si bulk FinFETs extensionProceedings paperhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6644496&tag=1