Explaining the parameters of the electron valence-band tunneling related lorentzian noise in fully depleted SOI MOSFET's

Simoen, EddyEddySimoenMercha, AbdelkarimAbdelkarimMerchaRafi, Joan MarcJoan MarcRafiClaeys, CorCorClaeysLukyanchikova, N.N.LukyanchikovaGarbar, N.N.Garbar2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/8153Explaining the parameters of the electron valence-band tunneling related lorentzian noise in fully depleted SOI MOSFET'sJournal article