A low-frequency noise study of the physical hot-carrier degradation mechanisms in lowly-doped-drain Si MOSFETs

Vasina, PetrPetrVasinaSimoen, EddyEddySimoenSikula, J.J.SikulaClaeys, CorCorClaeys2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1625A low-frequency noise study of the physical hot-carrier degradation mechanisms in lowly-doped-drain Si MOSFETsMeeting abstract