First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications

Florent, KarineKarineFlorentLavizzari, SimoneSimoneLavizzariDi Piazza, LucaLucaDi PiazzaPopovici, Mihaela IoanaMihaela IoanaPopoviciVecchio, EmmaEmmaVecchioPotoms, GoedeleGoedelePotomsGroeseneken, GuidoGuidoGroesenekenVan Houdt, JanJanVan Houdt2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/28342First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applicationsProceedings paperhttp://ieeexplore.ieee.org/document/7998162/