Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET

Benbakhti, BrahimBrahimBenbakhtiMartinez, AntonioAntonioMartinezKalna, KarolKarolKalnaHellings, GeertGeertHellingsEneman, GeertGeertEnemanDe Meyer, KristinKristinDe MeyerMeuris, MarcMarcMeuris2021-10-202021-10-2020121536-125Xhttps://imec-publications.be/handle/20.500.12860/20351Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFETJournal articlehttp://dx.doi.org/10.1109/TNANO.2012.2199514