Characteristics of low-energy nitrogen ion-implanted oxide and NO-annealed gate dielectrics

Lee, Shih ChungShih ChungLeeSimoen, EddyEddySimoenBadenes, GonçalGonçalBadenes2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9188Characteristics of low-energy nitrogen ion-implanted oxide and NO-annealed gate dielectricsJournal article